mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 1 of 9 features: ? mems technology ? direct pin to pin drop-in replacement for industry-standard packages ? lvcmos/hcmos compatible output ? industry-standard package 2.0 x1.6, 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm ? pb-free, rohs and reach compliant ? fast delivery times typical applications: ? fibre channel ? server and storage ? gpon, epon ? electronic specifications: frequency range 1.000 mhz to 110.000mhz frequency stability see part number guide inclusive of initial tole rance, operating temperature range, load, voltage, and aging operating temperature see part number guide supply voltage (vdd) 10% see part number guide current consumption 3.8 ma typ./ 4.7 ma max 3.6 ma typ./ 4.5 ma max 3.5 ma typ./ 4.5 ma max no load condition, f = 20 mhz, vdd = +2.8 v, +3.0 v or +3.3 v no load condition, f = 20 mhz, vdd = +2.5 v no load condition, f = 20 mhz, vdd = +1.8 v oe disable current 4.5 ma max 4.3 ma max vdd = +2.5 v, to +3.3 v, oe = low, output is high z state vdd = +1.8 v, oe = low, output is high z state standby current 2.6 a typ./ 8.5 a max 1.4 a typ. 5.5 a max 0.6 a typ./ 4.0 a max vdd = +2.8 v to 3.3 v, st = low vdd = +2.5 v, st = low vdd = +1.8 v, st = low waveform output lvcmos/hcmos symmetry 45%/55% 50% of waveform rise / fall time 1.0 nsec typ./ 2.0 nsec max 1.3 nsec typ./ 2.5 nsec max vdd = +2.5 v, +2.8 v, 3.0 v or 3.3 v from 20% to 80% of waveform vdd = +1.8 v, from 20% or 80% of waveform logic ?1? 90% of vdd min logic ?0? 10% of vdd max input voltage high 70% of vdd min pin 1, oe or st input voltage low 30% of vdd max pin 1, oe or st input pull-up impedance 50 k ? min, 87 k ? typ./ 150 k ? max 2.0 m ? min pin 1, oe logic high or logic low, or st logic high pin 1, st logic low startup time 5 msec max measured from the time v dd reaches its rated minimum values enable/disable time 130 nsec max f = 110 mhz, for other frequencies, t_oe = 100 nsec + 3 * clock periods resume time 5 msec max measured from the time st pin crosses 50% threshold. rms period jitter 1.6 psec typ./ 2.5 psec max 1.9 psec typ./ 3.0 psec max f = 75 mhz, vdd = +2.5 v, +2.8 v, +3.0 v or +3.3 v f = 75 mhz, vdd = +1.8 v peak-to-peak period jitter 12 psec typ./ 20 psec max 14 psec typ./ 25 psec max f = 75 mhz, vdd = +2.5 v, +2.8 v, +3.0 v or +3.3 v f = 75 mhz, vdd = +1.8 v rms period jitter (random) 0.5 psec typ./ 0.8 psec max 1.3 psec typ./ 2.0 psec max f = 75 mhz, integration bandwidth = 900 khz to 7.5 mhz f = 75 mhz, integration bandwidth = 12.0 khz to 20.0 mhz notes: ? all min and max limits are specified over temperature and rate d operating voltage with 15pf output unless otherwise stated. ? typical values are at +25oc and nominal supply voltage.
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 2 of 9 ordering information: part number guide packages input voltage operating temperature output drive strength stability (ppm) select function frequency IM820b ? 5.0 x 3.2 IM820c ? 3.2 x 2.5 IM820d ? 2.5 x 2.0 IM820e ? 2.0 x 1.6 1 = +1.8 v 6 = +2.5 v 2 = +2.8 v 7 = +3.0 v 3 = +3.3 v e = -40oc to +105oc f = -40oc to +125oc - = default (see tables 2 through 5) f = 20 a = 25 z = 30 b = 50 h = tri-state s = standby o = n/c - frequency sample part number: IM820e-1e-fs-50.0000 mhz this 50.0000 mhz oscillator in a 1.6 x 2.0 package with stability 20 ppm from -40oc to +105oc using a supply voltage of +1.8 v . the output drive strength (rise and fall time) is 2.40 nsec per table 1 with 30 pf load. with pin 1 function as standby sample part number: IM820c-1f-ah-66.0000 mhz this 66.0000 mhz oscillator in a 2.5 x 3.2 package with stability 25 ppm from -40oc to +125oc using a supply voltage of +1.8 v . the output drive strength (rise and fall time) is 2.40 nsec per table 1 with 30 pf load. with pin 1 function as tri-state notes: ? not all options are available at all frequencies and temperatures ranges. ? please consult with sales department for any other parameters or options. ? oscillator specification subj ect to change without notice. a bsolute maximum limits storage temperature -65oc to +150oc supply voltage (vdd) -0.5 vdc to 4.0 vdc electrostatic discharge 2000 v max solder temperature (follow standard pb free soldering guidelines) 260oc max junction temperature 150oc max test circuit waveform
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 3 of 9 performance plots: firgure 1: idd vs frequency figure 2: frequency vs temperature figure 3: rms period jitter vs frequency figure 4duty cycle vs frequency figure 5: 20% to 80% rise time vs temperature figure 6: 20% to 80% fall time vs temperature
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 4 of 9 figure 7: rms integrated phase jitter random (12 khz to 20.0 mhz) vs. frequency figure 8: rms integrated phase jitter random (900 khz to 20.0 mhz) vs. frequency environmental specifications: environmental compliance parameter condition/test method mechanical shock mil-std-883f, method 2002 mechanical vibration mil-std-883f, method 2007 temperature cycle jesd22, method a104 solderability mil-std-883f, method 2003 moisture sensitivity level msl level 1 at +260oc pb free solder reflow profile ts max to t l (ramp-up rate) 3oc / second max preheat temperature min (ts min) temperature typ (ts typ) temperature max (ts max) time (ts) 150oc 175oc 200oc 60 to180 seconds ramp-up tate (t l to tp 3oc / second max time maintained above temperature (t l ) time (t l ) 217oc 60 to 150 seconds peak temperature (tp) 260oc max for seconds time within 5oc to peak temperature (tp) 20 to 40 seconds ramp-down rate 6oc / second max tune 25oc to peak temperature 8 minute max moisture sensitivity level (msl) level 1 units are backward compatible with +240oc reflow processes
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 5 of 9 pin functionally pin description pin symbol functionality pin assignments 1 oe tri-state high or open = specified frequency output low = output is high impedance, only output is disabled. 1 4 3 2 top view gnd vdd out oe st n/c st standby high or open = specified frequency output. low = output is low. device goes to sleep mode. supply current reduces to standby current. n/c no connect any voltage between 0.0 v to vdd or open = specified frequency output pin 1 has no functiion 2 gnd power electrical ground 3 out output oscillator output 4 vdd power power supply voltage notes: 1. in oe or st mode, a pull-up resistor of 10.0 k ? or less is recommended if pin 1 is not externally driven. if pin 1 needs to be left floating, use the nc option. 2. a capacitor of value 0.1 f or higher bet ween pin 4 (vdd) and pin 1 (gnd) is required. pin 1 configuration options (oe, or , or nc) pin 1 of the IM820 can be factory-programmed to su pport three modes: output enable (oe), standby ( st ) or no connect (nc). output enable (oe) mode in the oe mode, applying logic low to the oe pin only disables the output driver and pu ts it in hi-z mode. the core of the devi ce continues to operate normally. power consumption is reduced due to the inactivity of the output. when the oe pin is pulled high , the output is typically enabled in <1 sec. standby mode in the st mode, a device enters into the st andby mode when pin 1 pulled low. all intern al circuits of the device are turned off . the current is reduced to a standby current, ty pically in the range of a few a. when st is pulled high, the device goes through the ?resume? process, which can take up to 5 msec. no connect (nc) mode in the nc mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 1. table 1 below summarizes the key relevant parameters in the operation of the device in oe, st, or nc mode. parameters oe st nc active current 20.0 mhz (max +1. 80 vdc) 6.0 ma 6.0 ma 6.0 ma oe disable current (max +1 .80 vdc) 4.5 ma n/a n/a standby current (typical +1.80 vdc) n/a 0.6 a n/a oe enable time at 20.0 mhz (max) 130 nsec n/a n/a resume time from standby (max, all frequency) n/a 5 msec n/a output driver in oe disabl e/standby mode high z n/a table 1 oe vs. vs. nc
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 6 of 9 timing diagram: figure 11: startup timing (oe/ mode) figure 12: standby resume timing ( mode only) figure 13: oe enable timing (oe mode only) fi gure 14: oe disable timing (oe mode only)
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 7 of 9 selectable drive strength option rise/fall time (20% to 80%) vs c load tables rise/fall time typ (ns) drive strength (c load ) 5 pf 15 pf 30 pf 45 pf 60 pf l 6.16 11.61 22.00 31.27 39.91 a 3.19 6.35 11.00 16.01 21.52 r 2.11 4.31 7.65 10.77 14.47 b 1.65 3.23 5.79 8.18 11.08 t 0.93 1.91 3.32 4.66 6.48 e 0.78 1.66 2.94 4.09 5.74 u 0.70 1.48 2.64 3.68 5.09 - = default 0.65 1.30 2.40 3.35 4.56 rise/fall time typ (ns) drive strength (c load ) 5 pf 15 pf 30 pf 45 pf 60 pf l 4.13 8.25 12.82 21.45 27.79 a 2.11 4.27 7.64 11.20 14.49 r 1.45 2.81 5.16 7.65 9.88 b 1.09 2.20 3.88 5.86 7.57 t 0.62 1.28 2.27 3.51 4.45 - = default 0.54 1.00 2.01 3.10 4.01 u 0.43 0.96 1.81 2.79 3.65 f 0.34 0.88 1.64 2.54 3.32 table 2: vdd = +1.8 v rise /fall time for specific c load table 3: vdd = +2.5 v rise/fall time for specific c load rise/fall time typ (ns) drive strength (c load ) 5 pf 15 pf 30 pf 45 pf 60 pf l 3.77 7.54 12.28 19.57 25.27 a 1.94 3.90 7.03 12.04 13.34 r 1.29 2.57 4.72 7.01 9.06 b 0.97 2.00 3.54 5.43 6.93 t 0.55 1.12 2.08 3.22 4.08 - = default 0.44 1.00 1.83 2.82 3.67 u 0.34 0.88 1.64 2.52 3.30 f 0.29 0.81 1.48 2.29 2.99 rise/fall time typ (ns) drive strength (c load ) 5 pf 15 pf 30 pf 45 pf 60 pf l 3.60 7.21 11.97 18.74 24.30 a 1.84 3.71 6.72 9.86 12.68 r 1.22 2.46 4.54 6.76 8.62 b 0.89 1.92 3.39 5.20 6.64 - = default 0.51 1.00 1.97 3.07 3.90 e 0.38 0.92 1.72 2.71 3.51 u 0.30 0.83 1.55 2.40 3.13 f 0.27 0.76 1.39 2.16 2.85 table 4: vdd = +2.8 v rise/fall time for specific c load table 5: vdd= +3.0 v rise/fall time for specific c load rise/fall time typ (ns) drive strength (c load ) 5 pf 15 pf 30 pf 45 pf 60 pf l 3.39 6.88 11.63 17.56 23.59 a 1.74 3.50 6.38 8.98 12.19 r 1.16 2.33 4.29 6.04 8.34 b 0.81 1.82 3.22 4.52 6.33 - = default 0.46 1.00 1.86 2.60 3.84 e 0.33 0.87 1.64 2.30 3.35 u 0.28 0.79 1.46 2.05 2.93 f 0.25 0.72 1.31 1.83 2.61 table 6: vdd = +3.3 v rise/fall time for specific c load
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 8 of 9 mechanical details: package dimensions and suggest land pattern marking 5.00 0.05 3.20 0.05 0.80 2.39 1.15 1.1 0.80 max 2.54 2.20 1.5 1.6 option b: 5.00 x 3.20 x 0.80 package 3 4 2 1 bottom view 3 marking 3.20 0.05 2.500.05 0.90 2.1 0.9 0.7 0.80 max bottom view 2.20 1.90 1.4 1.2 option c: 3.20 x 2.50 x 0.80 package 4 2 1 marking 2.50 0.05 2.00 0.05 1.10 1.00 0.75 0.5 0.80 max bottom view 1.90 1.50 1.1 1.0 option d: 2.50 x 2.00 x 0.80 package 21 3 4 1 2 4 3 marking 2.00 0.05 1.60 0.05 0.93 1.23 0.68 0.48 0.80 max bottom view 1.50 1.20 0.9 0.8 option e: 2.00 x 1.60 x 0.80 package suggested land pattern suggested land pattern suggested land pattern suggested land pattern marking line 1 = xxxxx (lot code) dot to denote pin 1 location package information leadframe: c194 plating: nipdau
mems oscillator, high temperature, lvcmos/hcmos compatible, 1.000 mhz to 100.000mhz IM820 series ilsi america phone 775-851-8880 fax 775-851-8882 email: e-mail@ilsiamerica.com www.ilsiamerica.com specifications subject to change without notice rev 01/30/16_a page 9 of 9 tape and reel dimensions direction of feed ref: eia-481-e q3 q4 q2 q1 width tape pitch reel dia part number size pitch tape width pin orient. reel dia. count im821b 5.0 x 3.2 8.0 0.1 12.3 max q1 180 dia 1000 330 dia 3000 im821c 3.2 x 2.5 4.0 0.1 8.3 max q1 180 dia 3000 im821d 2.5 x 2.0 4.0 0.1 8.3 max q1 180 dia 3000 im821e 2.0 x 1.6 4.0 0.1 8.3 max q1 180 dia 3000 notes:` ? all dimensions are in mm. ? do not scale drawings. proprietary and confidential this document contains proprietary information, and s uch information may not be disclosed to others for any purpose nor used for manufacturing purposes wi thout written permission from ilsi america.
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